onsemi FDI045N10A-F102
$ 2.11
Production
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | FDI045N10A-F102-ND | 222 | 1 | Tube | ||||||||
| Newark | FDI045N10A-F102 | 0 | 100 | |||||||||
| Onlinecomponents.com | FDI045N10A-F102 | 0 | 250 | Bulk | ||||||||
| Avnet | FDI045N10A-F102 | 0 | 1K | 21h | ||||||||
| Master Electronics | FDI045N10A-F102 | 0 | 250 |
Historique des stocks
Tendance sur 3 mois : -53.81%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Pièces détachées
InfineonIRFSL4410ZPBF
N CH POWER MOSFET, HEXFET, 100V, 97A, TO-262; Transistor Polarity:N Channel; Con
InfineonIRFSL3207ZPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.3Milliohms;ID 170A;TO-262;PD 300W;VF 1.3V
InfineonAUIRFSL4310
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a TO-262 Package
Descriptions
Descriptions de onsemi FDI045N10A-F102 fournies par ses distributeurs.
N-Channel 100 V 4.5 mOhm Through Hole POWERTRENCH MOSFET - I2PAK (TO-262)
PowerTrench® MOSFET, N-Channel, 100V, 164A, 4.5mΩ
Power MOSFET, N Channel, 100 V, 164 A, 0.0038 ohm, I2PAK, Through Hole
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : -53.81%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.27 nF
Max Operating Temperature175 °C
Max Power Dissipation263 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation263 W
Rds On Max4.5 mΩ
Rise Time26 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time23 ns
Dimensions
Height9.65 mm
Length10.29 mm
Width4.83 mm
Conformité
Classification environnementale
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Déclarations de conformité