onsemi FDB38N30U

N-Channel Power MOSFET, UniFETTM, Ultra FRFETTM, 300V, 38A, 120mΩ, D2PAK

UniFET1 300V N-Channel MOSFET, D2PAK - 2LD,TO263, SURFACE MOUNT

TRANSISTOR, N-CHANNEL, UNIFET, ULTRAFRFET, MOSFET, 300V, 38A, 120MOHM

Power Field-Effect Transistor, 38A I(D), 300V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

MOSFET, N-CH, 38A, 300V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 38A; Drain Source Voltage Vds: 300V; On Resistance Rds(on): 0.103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 313W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: UniFET Ultra FRFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.