onsemi 2N3415

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Obsolete
Page du fabricantFiche technique

Prix et stock

Voir tous les prix
DistributorSKUMinPkg
Avnet2N3415010K
13h
Farnell2N341501
10h
Component Stockers USA2N3415371
4d
Win SourceWS-2N341520235
11h
Worldway Electronics2N341512 8097Bulk
2d

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi 2N3415.

IHS

Datasheet3 pagesIl y a 28 ans
Datasheet0 pageIl y a 0 an

Fairchild Semiconductor

Jameco

iiiC

Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1979-06-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)

Pièces détachées

onsemiPN3643
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 150mA 10V 500mA 625mW 250MHz
Détails
onsemiSS9013FBU
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 78 @ 50mA 1V 100nA ICBO 625mW 40V
Détails
onsemiSS9013FTA
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Détails
onsemiSS9013GTA
Tape & Box (TB) Through Hole NPN SS9013 Bipolar (BJT) Transistor 112 @ 50mA 1V 500mA 625mW 20V
Détails
onsemiSS9013HBU
Bipolar (BJT) Transistor NPN 20V 500mA 625mW Through Hole TO-92-3
Détails
onsemiSS9013GBU
Bulk Through Hole NPN SINGLE Bipolar (BJT) Transistor 112 @ 50mA 1V 500mA 625mW 20V
Détails

Descriptions

Descriptions de onsemi 2N3415 fournies par ses distributeurs.

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
IHS
NPN General Purpose Amplifier | TRANS NPN 25V 0.5A TO-92
Win Source
NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.
North Star Micro
RF Bipolar Transistor; Transistor Polarity:N Channel; Package/Case:TO-92; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):180; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; C-E Breakdown Voltage:40V ;RoHS Compliant: Yes
Newark
TRANSISTOR, NPN 300MA TO-92; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:25V; Power Dissipation Pd:625mW; DC Collector Current:1A; DC Current Gain hFE:540; Operating Temperature Range:-55°C to +150°C; RF Transistor Case:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:50mA; Package / Case:TO-92; Termination Type:Through Hole; Transistor Case Style:TO-92; Transistor Type:General Purpose
element14 APAC

Images

Farnell
Farnell
element14
iiiC
Jameco
Rochester Electronics

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