Infineon IRS2008STRPBF

MOSFET and Power Driver 600mA 2-OUT Hi/Lo Side Non-Inverting 8-Pin SOIC Tube - Rail/Tube

MOSFET Driver, Half Bridge, 10V to 20V Supply, 600mA Out, 150ns Delay, SOIC-8

8Pin gate driver module, 25VPower, SOICencapsulation

IRS2008 Series 200 V 600 mA SMT N-Channel Half-Bridge Driver - SOIC-8

Gate Drivers The factory is currently not accepting orders for this product

200 V half-bridge gate driver IC with shutdown and VCC & VBS UVLO ensuring reliable start-up operation, SOIC 8N, RoHS

Driver 2-OUT High and Low Side Half Brdg 8-Pin SOIC N T/R

Tape & Reel (TR) Half-Bridge 2006 Non-Inverting gate driver 70ns 30ns -40C~150C TJ 290mA 600mA 0.8V 2.5V

MOSFET DRIVER, -40 TO 125DEG C; Driver Configuration: Half Bridge; Peak Output Current: 600mA; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: SOIC; No. of Pins: 8Pins; Input Delay: 680ns; Output Delay: 150ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; SVHC: No SVHC (27-Jun-2018)

EiceDRIVER™ 200 V half-bridge gate driver IC with typical 0.29 A source and 0.6 A sink currents in 8-Lead SOIC package for MOSFETs. The MLPQ 4 x 4 14L package version is also available: IRS2008M.The IRS2008 is a 200 V level shift junction isolated MOSFET driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVIC’s use in high frequency applications.IRS2005S/M: 200 V high-side and low-side gate driver IC with 680/150 ns propagation delay. Replace IRS2001S.