Infineon IRLB3034PBF

Single N-Channel 40 V 1.7 mOhm 108 nC HEXFET® Power Mosfet - TO-220-3

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Res Thick Film 2512 1K Ohm 5% 1W ±200ppm/C Molded SMD Automotive Punched Plastic T/R

Trans MOSFET N-CH 40V 343A 3-Pin(3+Tab) TO-220AB

MOSFET, 40V, 343A, 1.7 MOHM, 108 NC QG,TO220

Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

N Channel Mosfet, 40V, 195A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:195A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRLB3034PBF

MOSFET, N-CH 40V 195A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:195A; Package / Case:TO-220AB; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.