Infineon IRFP4768PBF

Single N-Channel 250 V 17.5 mOhm 270 nC HEXFET® Power Mosfet - TO-247AC

MOSFET N-CH 250V 93A TO247AC N-Channel 250 V 93A (Tc) 520W (Tc) Through Hole TO-247AC

250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

HEXFET POWER MOSFET Power Field-Effect Transistor, 93A I(D), 250V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

N Channel Mosfet, 250V, 93A, To-247Ac; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:93A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRFP4768PBF

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

MOSFET, N-CH 250V 93A TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:250V; On Resistance Rds(on):17.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:93A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Power Dissipation Pd:520W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V