Infineon IRFP2907PBF

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 4.5Milliohms;ID 209A;TO-247AC;PD 470W;-55de

75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

IRFP2907PBF,MOSFET, 75V, 177A, 4.5 MOHM, 410 NC QG, TO-247AC

Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

N CH MOSFET, 75V, 209A, TO-247AC; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:209A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:470W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Current Id Max:209A; Junction to Case Thermal Resistance A:0.45°C/W; Package / Case:TO-247AC; Power Dissipation Pd:470W; Power Dissipation Pd:330W; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.