Infineon IR21365JPBF

Tube IR21365JPBF Half-Bridge 2008 gate driver 190ns -40C~150C TJ 200mA 350mA 2W
$ 4.11
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Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour Infineon IR21365JPBF.

IHS

Datasheet36 pagesIl y a 17 ans
Datasheet36 pagesIl y a 17 ans

SHENGYU ELECTRONICS

Arrow Electronics

iiiC

Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.39.00.60
Introduction Date2019-04-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2012-08-11
LTD Date2013-02-11

Descriptions

Descriptions de Infineon IR21365JPBF fournies par ses distributeurs.

Tube IR21365JPBF Half-Bridge 2008 gate driver 190ns -40C~150C TJ 200mA 350mA 2W
3 Phase Driver, Soft Turn-on, Inverting Input Separate High and Low Side Inputs, 200ns Deadtime.
Half Bridge Based IGBT/MOSFET Driver, 0.35A, CMOS, PQCC32
IC, MOSFET DRIVER, HALF BRIDGE, LCC-32
IC GATE DRVR HALF-BRIDGE 44PLCC
The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or under voltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts.

Alias du fabricant

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias de numéro de pièce

Ce composant peut être référencé sous ces autres numéros :

  • IRFIR21365JPBF