Infineon AUIRFR9024N
$ 0.939
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
Distributeur
SKU
Minimum
Emballage
Prix de gros
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
0 models available
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-19
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2020-01-31
LTD Date2021-07-31
Pièces détachées
InfineonIRFR9024NTRPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;D-Pak (TO-252AA);PD 38W
InfineonIRFR9024NTRLPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;D-Pak (TO-252AA);PD 38W
InfineonIRFR9024NPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;D-Pak (TO-252AA);PD 38W
Descriptions
Descriptions de Infineon AUIRFR9024N fournies par ses distributeurs.
Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
Infineon SCT
Trans MOSFET P-CH 55V 11A Automotive 3-Pin(2+Tab) DPAK Tube
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET, P CH, 55V, 11A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.175ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:38W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
0 models available
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance175 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance175 mΩ
Package Quantity3000
Power Dissipation38 W
Rds On Max175 mΩ
Rise Time55 ns
Schedule B8541290080
Turn-Off Delay Time23 ns
Turn-On Delay Time13 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Conformité
Classification environnementale
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité