onsemi FQP17P10
EOL
In StockTechnical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)16.5 A
Current Rating-16.5 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)-100 V
Dual Supply Voltage-100 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.1 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
Power Dissipation100 W
Rds On Max190 mΩ
Resistance190 MΩ
Rise Time200 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)-100 V
Dimensions
Height9.4 mm
Lead Pitch2.54 mm
Length10.1 mm
Width4.7 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FQP17P10.
Fairchild Semiconductor
Farnell
element14 APAC
iiiC
Supply Chain
Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FQP17P10.
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Descriptions
Descriptions of onsemi FQP17P10 provided by its distributors.
P-Channel MOSFET, QFET®, -100V, -16.5A, 190mΩ
Trans MOSFET P-CH 100V 16.5A 3-Pin(3+Tab) TO-220AB Rail
P-Channel 100 V 190 mOhm Flange Mount Mosfet - TO-220
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:16.5A; Source Voltage Vds:-100V; On Resistance Rds(on):0.14ohm;
100V P-CHANNEL MOSFET Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
MOSFET, P, TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: 16.5A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.14ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 100W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: -16.5A; Device Marking: FQP17P10; Operating Temperature Min: -55°C; Pulse Current Idm: 66A; Termination Type: Through Hole; Voltage Vds Typ: -100V; Voltage Vgs Max: -4V; Voltage Vgs Rds on Measurement: -10V
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)16.5 A
Current Rating-16.5 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)-100 V
Dual Supply Voltage-100 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.1 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
Power Dissipation100 W
Rds On Max190 mΩ
Resistance190 MΩ
Rise Time200 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)-100 V
Dimensions
Height9.4 mm
Lead Pitch2.54 mm
Length10.1 mm
Width4.7 mm
Documents
Download datasheets and manufacturer documentation for onsemi FQP17P10.
Fairchild Semiconductor
Farnell
element14 APAC
iiiC
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements