onsemi FQP17P06

P-Channel Power MOSFET, QFET®, -60 V, -17 A, 120 mΩ, TO-220
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)-17 A
Current Rating-17 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance900 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
Power Dissipation79 W
Rds On Max120 mΩ
Resistance120 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time22 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-60 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm

Documents

Download datasheets and manufacturer documentation for onsemi FQP17P06.

Fairchild Semiconductor
Datasheet8 pages22 years ago
Datasheet8 pages24 years ago
Technical Drawing1 page10 years ago
Technical Drawing1 page14 years ago
Technical Drawing1 page16 years ago
Upverter
Datasheet0 pages0 years ago
Technical Drawing1 page4 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet8 pages15 years ago
Jameco
Datasheet9 pages16 years ago
iiiC
Datasheet8 pages22 years ago
TME
Datasheet0 pages0 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FQP17P06.

Related Parts

Descriptions

Descriptions of onsemi FQP17P06 provided by its distributors.

P-Channel Power MOSFET, QFET®, -60 V, -17 A, 120 mΩ, TO-220
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:79W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:-17A; Current Temperature:25°C; Device Marking:FQP17P06; External Depth:29.03mm; External Length / Height:4.5mm; External Width:9.9mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:120mohm; Package / Case:TO-220; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • FQP17P06.

Technical Specifications

Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)-17 A
Current Rating-17 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance900 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
Power Dissipation79 W
Rds On Max120 mΩ
Resistance120 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time22 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-60 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm

Documents

Download datasheets and manufacturer documentation for onsemi FQP17P06.

Fairchild Semiconductor
Datasheet8 pages22 years ago
Datasheet8 pages24 years ago
Technical Drawing1 page10 years ago
Technical Drawing1 page14 years ago
Technical Drawing1 page16 years ago
Upverter
Datasheet0 pages0 years ago
Technical Drawing1 page4 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet8 pages15 years ago
Jameco
Datasheet9 pages16 years ago
iiiC
Datasheet8 pages22 years ago
TME
Datasheet0 pages0 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago