onsemi FQP13N10L
EOL
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)12.8 A
Current Rating12.8 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance142 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time72 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance520 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation65 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation65 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time220 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time22 ns
Turn-On Delay Time7.5 ns
Voltage Rating (DC)100 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Inventory History
3 month trend: -3.30%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FQP13N10L.
TME
Fairchild Semiconductor
Newark
Upverter
Jameco
iiiC
Supply Chain
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FQP13N10L.
Related Parts
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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V
VishayIRF530PBF
Single N-Channel 100 V 0.16 Ohms Flange Mount Power Mosfet - TO-220-3
onsemiFQP13N10
N-Channel Power MOSFET, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220
Descriptions
Descriptions of onsemi FQP13N10L provided by its distributors.
N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220
Trans MOSFET N-CH 100V 12.8A 3-Pin(3+Tab) TO-220AB Rail
N-Channel 100 V 0.18 Ohm Through Hole Mosfet - TO-220
MOSFET, N CH, 100V, 12.8A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
MOSFET, N CH, 100V, 12.8A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:12.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.142ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:65W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (07-Jul-2017)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -3.30%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)12.8 A
Current Rating12.8 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance142 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time72 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance520 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation65 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation65 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time220 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time22 ns
Turn-On Delay Time7.5 ns
Voltage Rating (DC)100 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Documents
Download datasheets and manufacturer documentation for onsemi FQP13N10L.
TME
Fairchild Semiconductor
Newark
Upverter
Jameco
iiiC
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements