onsemi FQD5P20TM

P-channel Power Mosfet, Qfet®, -200 V, -3.7 A, 1.4 Ω, Dpak
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)3.7 A
Current Rating-3.7 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance430 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max1.4 Ω
Resistance1.4 Ω
Rise Time70 ns
Schedule B8541290080
Turn-Off Delay Time12 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)-200 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm

Documents

Download datasheets and manufacturer documentation for onsemi FQD5P20TM.

element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet9 pages10 years ago
Technical Drawing1 page10 years ago
Technical Drawing1 page13 years ago
Newark
Datasheet9 pages23 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
DigiKey
Datasheet2 pages20 years ago
Mouser
Datasheet9 pages23 years ago
TME
Datasheet0 pages0 years ago

Inventory History

3 month trend:
+40.00%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FQD5P20TM.

Related Parts

Descriptions

Descriptions of onsemi FQD5P20TM provided by its distributors.

P-Channel Power MOSFET, QFET®, -200 V, -3.7 A, 1.4 Ω, DPAK
Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P CH, -200V, -3.7A, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:45W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Technical Specifications

Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)3.7 A
Current Rating-3.7 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance430 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max1.4 Ω
Resistance1.4 Ω
Rise Time70 ns
Schedule B8541290080
Turn-Off Delay Time12 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)-200 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm

Documents

Download datasheets and manufacturer documentation for onsemi FQD5P20TM.

element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet9 pages10 years ago
Technical Drawing1 page10 years ago
Technical Drawing1 page13 years ago
Newark
Datasheet9 pages23 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
DigiKey
Datasheet2 pages20 years ago
Mouser
Datasheet9 pages23 years ago
TME
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago