onsemi FQD13N06LTM

N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK
Production

Price and Stock

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Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance115 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max115 mΩ
Resistance115 mΩ
Rise Time90 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time20 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm

Documents

Download datasheets and manufacturer documentation for onsemi FQD13N06LTM.

Upverter
Datasheet10 pages10 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Newark
Datasheet10 pages10 years ago
Datasheet10 pages10 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet9 pages22 years ago
Technical Drawing1 page10 years ago
Technical Drawing1 page13 years ago
element14 APAC
Datasheet0 pages0 years ago
DigiKey
Datasheet2 pages20 years ago
Mouser
Datasheet9 pages22 years ago
TME
Datasheet0 pages0 years ago

Inventory History

3 month trend:
+1815%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FQD13N06LTM.

Related Parts

Descriptions

Descriptions of onsemi FQD13N06LTM provided by its distributors.

N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,11A I(D),TO-252AA
N-Channel 60 V 0.115 Ohm Surface Mount LOGIC Mosfet - TO-252-3
MOSFET, N CH, 60V, 11A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Source Voltage Vds:60V; On Resistance
Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 60V, 11A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 28W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Technical Specifications

Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance115 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max115 mΩ
Resistance115 mΩ
Rise Time90 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time20 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm

Documents

Download datasheets and manufacturer documentation for onsemi FQD13N06LTM.

Upverter
Datasheet10 pages10 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Newark
Datasheet10 pages10 years ago
Datasheet10 pages10 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet9 pages22 years ago
Technical Drawing1 page10 years ago
Technical Drawing1 page13 years ago
element14 APAC
Datasheet0 pages0 years ago
DigiKey
Datasheet2 pages20 years ago
Mouser
Datasheet9 pages22 years ago
TME
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago