Diodes Inc. FMMT634TA
Technical Specifications
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)120 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage850 mV
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current900 mA
Current Rating900 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)12 V
Max Breakdown Voltage100 V
Max Collector Current900 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency140 MHz
Voltage Rating (DC)100 V
Dimensions
Height1 mm
Length3.05 mm
Width1.4 mm
Inventory History
3 month trend: +47.68%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Diodes Inc. FMMT634TA.
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Descriptions
Descriptions of Diodes Inc. FMMT634TA provided by its distributors.
FMMT634 Series 100 V 900 mA NPN Silicon Power Darlington Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.9A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
TRANS NPN DARL 100V 0.9A SOT23-3 / Trans Darlington NPN 100V 0.9A 625mW 3-Pin SOT-23 T/R
DARLINGTON TRANSISTOR, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:625mW; DC Collector Current:900mA; DC Current Gain hFE:60000; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; Av Current Ic:900mA; Collector Emitter Voltage Vces:960mV; Continuous Collector Current Ic Max:900mA; Current Ic @ Vce Sat:930mA; Current Ic Continuous a Max:900mA; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:140MHz; Gain Bandwidth ft Typ:140MHz; Hfe Min:15000; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulsed Current Icm:5A; Termination Type:SMD; Transistor Type:Darlington; Voltage Vcbo:120V
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
Inventory History
3 month trend: +47.68%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)120 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage850 mV
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current900 mA
Current Rating900 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)12 V
Max Breakdown Voltage100 V
Max Collector Current900 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency140 MHz
Voltage Rating (DC)100 V
Dimensions
Height1 mm
Length3.05 mm
Width1.4 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements