onsemi FDT3612

ON SEMICONDUCTOR - FDT3612 - MOSFET Transistor, N Channel, 3.7 A, 100 V, 0.12 ohm, 10 V, 2.5 V
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight250.2 mg
Technical
Continuous Drain Current (ID)3.7 A
Current Rating3.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance88 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time4.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance632 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3 W
Rds On Max120 mΩ
Resistance120 MΩ
Rise Time2 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time23 ns
Turn-On Delay Time8.5 ns
Voltage Rating (DC)100 V
Dimensions
Height1.6 mm
Length6.5 mm
Width3.56 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDT3612.

Fairchild Semiconductor
Datasheet5 pages23 years ago
Technical Drawing1 page15 years ago
Upverter
Datasheet5 pages23 years ago
Technical Drawing1 page4 years ago
element14 APAC
Datasheet5 pages23 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
iiiC
Datasheet5 pages23 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

Inventory History

3 month trend:
+14.82%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDT3612.

Related Parts

Descriptions

Descriptions of onsemi FDT3612 provided by its distributors.

ON SEMICONDUCTOR - FDT3612 - MOSFET Transistor, N Channel, 3.7 A, 100 V, 0.12 ohm, 10 V, 2.5 V
N-Channel PowerTrench® MOSFET, 100V, 3.7A, 120mΩ
N-Channel 100 V 120 mOhm SMT PowerTrench Mosfet- SOT-223
FAIRCHILD FDT3612 / MOSFET N-CH 100V 3.7A SOT-223 D/C D1025AC
MOSFET, N CH, 100V, 3.7A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.2A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • FDT3612.

Technical Specifications

Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight250.2 mg
Technical
Continuous Drain Current (ID)3.7 A
Current Rating3.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance88 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time4.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance632 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3 W
Rds On Max120 mΩ
Resistance120 MΩ
Rise Time2 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time23 ns
Turn-On Delay Time8.5 ns
Voltage Rating (DC)100 V
Dimensions
Height1.6 mm
Length6.5 mm
Width3.56 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDT3612.

Fairchild Semiconductor
Datasheet5 pages23 years ago
Technical Drawing1 page15 years ago
Upverter
Datasheet5 pages23 years ago
Technical Drawing1 page4 years ago
element14 APAC
Datasheet5 pages23 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
iiiC
Datasheet5 pages23 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago