Fairchild Semiconductor FDS6892A

Dual N-Channel 20 V 18 mOhm PowerTrench Mosfet - SOIC-8

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Descriptions

TRANSISTOR, MOSFET; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:7.5A; Current Id Max:7.5A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):18mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
element14 APAC
MOSFET N-Channel 20V 7.5A SOIC8
RS Components
Dual N-Channel 20 V 18 mOhm PowerTrench Mosfet - SOIC-8
Future Electronics
Trans MOSFET N-CH 20V 7.5A 8-Pin SOIC N T/R
Avnet Asia
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:7.5A; On Resistance, Rds(on):18mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes
Newark
20V/12V, 18/24MO, NCH, DUAL, SO8, 300A, PTII
Avnet
Trans MOSFET N-CH 20V 7.5A 8-Pin SOIC N T/R
Verical
Trans MOSFET N-CH 20V 7.5A 8-Pin SOIC N T/R
Chip One Stop Japan
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Fairchild Semiconductor
TRANSISTOR,MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Voltage, Vds Typ:20V; Current, Id Cont:7.5A; On State Resistance:0.018ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.9V; Case Style:SO-8; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C
Farnell
MOSFET 2N-CH 20V 7.5A 8SOIC
Digi-Key

Technical Specifications

Drain to Source Resistance (on) (Rds) 18 mΩ
Power Dissipation 2 W
Voltage Rating (DC) 20 V
Breakdown Voltage (Drain to Source) 20 V
Mounting Type Surface Mount
Input Capacitance 1.333 nF
Drain to Source Voltage (Vds) 20 V
REACH SVHC Compliance No SVHC
Lifecycle Status Active
Rise Time 15 ns
RoHS Compliant
Number of Pins 8
Current Rating 7.5 A
Breakdown Voltage [Gate to Source] -12 V (min) - 12 V (max)
Continuous Drain Current (Ids) 7.5 A
Gate Charge 12 nC
Lead-Free Status Lead Free
Packaging Cut Tape (CT)
Case / Package / Footprint SOIC
Polarity N-Channel Dual N-Channel

Documents

Newark
Datasheet 5 pages
Fairchild Semiconductor
Technical Drawing 1 page 2 years ago
Technical Drawing 1 page 3 years ago
iiiC
Datasheet 5 pages
Jameco
Datasheet 6 pages 9 years ago
Compliance Statements
Rohs Statement 1 page 4 years ago
Reach Statement 2 pages 3 years ago
Rohs Statement 1 page 3 years ago
Reach Statement 3 pages 3 years ago
Materials Sheet 3 pages 3 years ago
Reach Statement 3 pages 2 years ago
Materials Sheet 3 pages 2 years ago

Images

Alternate Names

FAIRCHILD FDS6892A
FSC FDS6892A
FAIR FDS6892A
QTC FDS6892A
FAI FDS6892A
FAIRCHIL FDS6892A
FAIRCHILD SEMI FDS6892A
FCS FDS6892A
QT OPTO FDS6892A
FAIRCH FDS6892A
SPT FDS6892A
FAIRCHILD SEMICONDUCTOR CORP FDS6892A
FAIRCHI FDS6892A
FAIRC FDS6892A
FARICHILD FDS6892A
FAIRCHLD FDS6892A
FCH FDS6892A
FARA FDS6892A
FDS FDS6892A
FAIRCHILD SEMICONDUC FDS6892A
NSC/FSC FDS6892A
SIGNAL PROCESSING TECHNOLOGIES FDS6892A
FAIRCHILD SEMIC FDS6892A
OTHER FDS6892A
FAIRCHICD FDS6892A

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