onsemi FDS6681Z
Production
In StockTechnical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight130 mg
Technical
Continuous Drain Current (ID)20 A
Current Rating-20 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance3.8 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time380 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance7.54 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max4.6 mΩ
Resistance4.6 MΩ
Rise Time9 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1.8 V
Turn-Off Delay Time660 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Inventory History
3 month trend: +2.95%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi FDS6681Z.
element14
element14 APAC
Arrow Electronics
Jameco
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TME
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.968
$ 0.615
Stock
1,755,228
1,019,465
Authorized Distributors
10
14
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
20 A
-20 A
Threshold Voltage
-1.8 V
-1.8 V
Rds On Max
4.6 mΩ
4.6 mΩ
Gate to Source Voltage (Vgs)
25 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
7.54 nF
5.25 nF
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDS6681Z.
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InfineonIRF7832TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
Descriptions
Descriptions of onsemi FDS6681Z provided by its distributors.
P-Channel 30 V 4.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
P-Channel PowerTrench® MOSFET, 30V, -20A, 4.6mΩ
ON SEMICONDUCTOR - FDS6681Z - MOSFET Transistor, P Channel, -20 A, -30 V, 0.0038 ohm, -10 V, -1.8 V
Trans MOSFET P-CH 30V 20A 8-Pin SOIC N T/R
30 VOLT P-CHANNEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 20A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +2.95%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight130 mg
Technical
Continuous Drain Current (ID)20 A
Current Rating-20 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance3.8 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time380 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance7.54 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max4.6 mΩ
Resistance4.6 MΩ
Rise Time9 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1.8 V
Turn-Off Delay Time660 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDS6681Z.
element14
element14 APAC
Arrow Electronics
Jameco
iiiC
TME
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements