onsemi FDS6680AS
EOL
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight130 mg
Technical
Continuous Drain Current (ID)11.5 A
Current Rating-11.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.24 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max10 mΩ
Recovery Time18 ns
Resistance10 MΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time18 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FDS6680AS.
Fairchild Semiconductor
Upverter
Mouser
DigiKey
TME
Supply Chain
Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDS6680AS.
Related Parts
Infineon IRF7413ZTRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V
Infineon IRF7413ZPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V
onsemi FDS6670A
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 13A, 8mΩ
Descriptions
Descriptions of onsemi FDS6680AS provided by its distributors.
FDS6680 Series 30 V 10 mO N-Channel PowerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 30V 11.5A 8-Pin SOIC N T/R
N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:2.5mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:11.5A; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:50A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight130 mg
Technical
Continuous Drain Current (ID)11.5 A
Current Rating-11.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.24 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max10 mΩ
Recovery Time18 ns
Resistance10 MΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time18 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDS6680AS.
Fairchild Semiconductor
Upverter
Mouser
DigiKey
TME
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements