onsemi FDS4685
Production
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight130 mg
Technical
Continuous Drain Current (ID)-8.2 A
Current Rating-8.2 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.872 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.2 W
Min Operating Temperature-55 °C
Nominal Vgs-1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max27 mΩ
Resistance27 MΩ
Rise Time11 ns
Schedule B8541290080
Threshold Voltage-1.6 V
Turn-Off Delay Time50 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-40 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Inventory History
3 month trend: +36.12%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FDS4685.
element14 APAC
onsemi
Jameco
iiiC
TME
Newark
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDS4685.
Related Parts
InfineonIRF7416PBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS +/-20V;-55
InfineonIRF7416TRPBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS +/-20V;-55
onsemiSI4435DY
MOSFET P-CH 30V 8.8A 8-SOIC / Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC T/R
Descriptions
Descriptions of onsemi FDS4685 provided by its distributors.
P-Channel PowerTrench® MOSFET, 40V, -8.2A, 27mΩ
MOSFET P-CH 40V 8.2A 8SOIC / Trans MOSFET P-CH 40V 8.2A 8-Pin SOIC T/R
MOSFET, P CH, 40V, 8.2A, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:1.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -8.2 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 50 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.5
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +36.12%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight130 mg
Technical
Continuous Drain Current (ID)-8.2 A
Current Rating-8.2 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.872 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.2 W
Min Operating Temperature-55 °C
Nominal Vgs-1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max27 mΩ
Resistance27 MΩ
Rise Time11 ns
Schedule B8541290080
Threshold Voltage-1.6 V
Turn-Off Delay Time50 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-40 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDS4685.
element14 APAC
onsemi
Jameco
iiiC
TME
Newark
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements