onsemi FDN340P

P-Channel PowerTrench® MOSFET, Logic Level, -20V, -2A, 70mΩ
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)2 A
Current Rating-2 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance779 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Manufacturer Package IdentifierSuperSOT3
Min Operating Temperature-55 °C
Nominal Vgs-800 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time9 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-800 mV
Turn-Off Delay Time27 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-20 V
Dimensions
Height940 µm
Length2.92 mm
Width3.05 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDN340P.

Farnell
Datasheet5 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet8 pages15 years ago
Upverter
Datasheet5 pages0 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet6 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
TME
Datasheet5 pages0 years ago
Jameco
Datasheet6 pages16 years ago
Fairchild Semiconductor
Technical Drawing1 page20 years ago
iiiC
Datasheet5 pages0 years ago

Inventory History

3 month trend:
+14.93%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDN340P.

Related Parts

Descriptions

Descriptions of onsemi FDN340P provided by its distributors.

P-Channel PowerTrench® MOSFET, Logic Level, -20V, -2A, 70mΩ
Transistor MOSFET P Channel 20 Volt 2 Amp 3 Pin Supersot Tape and Reel
P-CHANNEL SINGLE WITH BUILT-IN DIODE 3 EAR99 Mosfet Transistor 2A 0.5W 20V 70Ohm
Trans MOSFET P-CH 20V 2A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 2A SSOT3
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications:load switching and power management, battery charging circuits, and DC/DC conversion.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -2 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 110 / Gate-Source Voltage V = 8 / Fall Time ns = 20 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 43 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • FDN340P.

Technical Specifications

Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)2 A
Current Rating-2 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance779 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Manufacturer Package IdentifierSuperSOT3
Min Operating Temperature-55 °C
Nominal Vgs-800 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max70 mΩ
Resistance70 MΩ
Rise Time9 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-800 mV
Turn-Off Delay Time27 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-20 V
Dimensions
Height940 µm
Length2.92 mm
Width3.05 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDN340P.

Farnell
Datasheet5 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet8 pages15 years ago
Upverter
Datasheet5 pages0 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet6 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
TME
Datasheet5 pages0 years ago
Jameco
Datasheet6 pages16 years ago
Fairchild Semiconductor
Technical Drawing1 page20 years ago
iiiC
Datasheet5 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Rohs Statement1 page11 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page10 years ago