onsemi FDN338P

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.6A, 115mΩ
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)1.6 A
Current Rating-1.6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance88 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance451 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation460 mW
Min Operating Temperature-55 °C
Nominal Vgs-800 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max115 mΩ
Resistance115 mΩ
Rise Time11 ns
Threshold Voltage-800 mV
Turn-Off Delay Time16 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.22 mm
Width3.05 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDN338P.

element14 APAC
Datasheet5 pages22 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Datasheet0 pages0 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet0 pages0 years ago
Technical Drawing1 page20 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet8 pages15 years ago
Jameco
Datasheet6 pages16 years ago
iiiC
Datasheet5 pages22 years ago
TME
Datasheet0 pages0 years ago

Inventory History

3 month trend:
-15.74%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDN338P.

Related Parts

Descriptions

Descriptions of onsemi FDN338P provided by its distributors.

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.6A, 115mΩ
P-Channel 20 V 115 mOhm 2.5V Specified PowerTrench Mosfet SSOT-3
P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-800mV; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.6A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:5A; SMD Marking:338; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-800mV; Voltage Vgs Rds on Measurement:-4.5V

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • FDN 338P
  • FDN338P.

Technical Specifications

Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)1.6 A
Current Rating-1.6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance88 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance451 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation460 mW
Min Operating Temperature-55 °C
Nominal Vgs-800 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max115 mΩ
Resistance115 mΩ
Rise Time11 ns
Threshold Voltage-800 mV
Turn-Off Delay Time16 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.22 mm
Width3.05 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDN338P.

element14 APAC
Datasheet5 pages22 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Datasheet0 pages0 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet0 pages0 years ago
Technical Drawing1 page20 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet8 pages15 years ago
Jameco
Datasheet6 pages16 years ago
iiiC
Datasheet5 pages22 years ago
TME
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Materials Sheet3 pages9 years ago
Reach Statement3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago