This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-800mV; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.6A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:5A; SMD Marking:338; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-800mV; Voltage Vgs Rds on Measurement:-4.5V