onsemi FDMS86500L

Transistor, MOSFET, N-CH, 60V, 25A, 2.5 mOhms, QFN, SMD
Production
In Stock

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-220-3
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight68.1 mg
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.1 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time7.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.53 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max2.5 mΩ
Resistance2.5 MΩ
Rise Time16 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time63 ns
Turn-On Delay Time27 ns
Dimensions
Height1.05 mm
Length5 mm
Width6 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDMS86500L.

onsemi
Datasheet8 pages5 years ago
Datasheet8 pages5 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet7 pages17 years ago
Datasheet7 pages17 years ago
Technical Drawing1 page10 years ago
Technical Drawing1 page11 years ago
element14 APAC
Datasheet7 pages17 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Upverter
Technical Drawing1 page4 years ago
Newark
Datasheet7 pages5 years ago
Datasheet0 pages0 years ago

Inventory History

3 month trend:
+33.20%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDMS86500L.

Related Parts

Descriptions

Descriptions of onsemi FDMS86500L provided by its distributors.

Transistor, MOSFET, N-CH, 60V, 25A, 2.5 mOhms, QFN, SMD
FDMS86500L Series 60 V 158 A 2.5 mOhm N-Channel PowerTrench® MOSFET - POWER-56
N-Channel PowerTrench® MOSFET 60V, 158A, 2.5mΩ
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance.
MOSFET, N CH, 60V, 80A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • FDMS86500L.

Technical Specifications

Physical
Case/PackageTO-220-3
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight68.1 mg
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.1 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time7.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.53 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max2.5 mΩ
Resistance2.5 MΩ
Rise Time16 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time63 ns
Turn-On Delay Time27 ns
Dimensions
Height1.05 mm
Length5 mm
Width6 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDMS86500L.

onsemi
Datasheet8 pages5 years ago
Datasheet8 pages5 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet7 pages17 years ago
Datasheet7 pages17 years ago
Technical Drawing1 page10 years ago
Technical Drawing1 page11 years ago
element14 APAC
Datasheet7 pages17 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Upverter
Technical Drawing1 page4 years ago
Newark
Datasheet7 pages5 years ago
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement4 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement4 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago