onsemi FDMS86263P

PT5 150/25V Pch Power Trench MOSFET - 8LD, PQFN, JEDEC MO-240 AA, 5.0X6.0MM
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight68.1 mg
Technical
Continuous Drain Current (ID)-4.4 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance43 mΩ
Drain to Source Voltage (Vdss)-150 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.905 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation104 W
Rds On Max53 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage-2.9 V
Turn-Off Delay Time37 ns
Turn-On Delay Time17 ns
Dimensions
Height1.05 mm
Length5 mm
Width5.85 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDMS86263P.

onsemi
Datasheet0 pages0 years ago
Datasheet8 pages1 year ago
Datasheet0 pages0 years ago
Upverter
Datasheet0 pages0 years ago
Technical Drawing1 page4 years ago
Future Electronics
Datasheet7 pages13 years ago
Fairchild Semiconductor
Technical Drawing1 page9 years ago
Technical Drawing1 page10 years ago
Arrow.cn
Datasheet0 pages0 years ago

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDMS86263P.

Related Parts

Descriptions

Descriptions of onsemi FDMS86263P provided by its distributors.

PT5 150/25V Pch Power Trench MOSFET - 8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM
P-Channel PowerTrench® MOSFET -150V, -22A, 53mΩ
FDMS86263P Series -150 V 4.4 A 53 mOhm P-Ch PowerTrench Mosfet - Power56
MOSFET, P-CH, -150V, -22A, POWER 56-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-22A; Source Voltage Vds:-150V; On Resistance
Power Field-Effect Transistor, 4.4A I(D), 150V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
MOSFET, P-CH, -150V, -22A, POWER 56-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -22A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.042ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.9V; Power Dissipation Pd: 104W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Technical Specifications

Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight68.1 mg
Technical
Continuous Drain Current (ID)-4.4 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance43 mΩ
Drain to Source Voltage (Vdss)-150 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.905 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation104 W
Rds On Max53 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage-2.9 V
Turn-Off Delay Time37 ns
Turn-On Delay Time17 ns
Dimensions
Height1.05 mm
Length5 mm
Width5.85 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDMS86263P.

onsemi
Datasheet0 pages0 years ago
Datasheet8 pages1 year ago
Datasheet0 pages0 years ago
Upverter
Datasheet0 pages0 years ago
Technical Drawing1 page4 years ago
Future Electronics
Datasheet7 pages13 years ago
Fairchild Semiconductor
Technical Drawing1 page9 years ago
Technical Drawing1 page10 years ago
Arrow.cn
Datasheet0 pages0 years ago

Compliance

Environmental Classification
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Rohs Statement4 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement4 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago