onsemi FDMS86181

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
MountSurface Mount
Number of Pins8
Weight90 mg
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.125 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation2.5 W
Rds On Max4.2 mΩ
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time25 ns
Turn-On Delay Time17 ns
Dimensions
Height1.1 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDMS86181.

onsemi
Datasheet7 pages5 years ago
Datasheet8 pages5 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Future Electronics
Datasheet0 pages0 years ago
Datasheet1 page4 years ago
Fairchild Semiconductor
Technical Drawing1 page10 years ago

Inventory History

3 month trend:
+7.09%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDMS86181.

Related Parts

Descriptions

Descriptions of onsemi FDMS86181 provided by its distributors.

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ
Transistor MOSFET N-CH 100V 124A 8-Pin Power 56 T/R
Avnet Japan
Mosfet, N-Ch, 100V, 124A, Power56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0033Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Rohs Compliant: Yes |Onsemi FDMS86181
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Technical Specifications

Physical
MountSurface Mount
Number of Pins8
Weight90 mg
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.125 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation2.5 W
Rds On Max4.2 mΩ
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time25 ns
Turn-On Delay Time17 ns
Dimensions
Height1.1 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDMS86181.

onsemi
Datasheet7 pages5 years ago
Datasheet8 pages5 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Future Electronics
Datasheet0 pages0 years ago
Datasheet1 page4 years ago
Fairchild Semiconductor
Technical Drawing1 page10 years ago

Compliance

Environmental Classification
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago