onsemi FDMC8030
Production
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Weight196 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationDual
Fall Time3 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.975 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements1
PackagingTape and Reel
Power Dissipation800 mW
Rds On Max10 mΩ
Rise Time3 ns
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time19 ns
Turn-On Delay Time7 ns
Dimensions
Height750 µm
Length3 mm
Width3 mm
Inventory History
3 month trend: +96.70%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusLIFETIME (Last Updated: 4 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDMC8030.
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Single N-Channel 40 V 9.3 mOhm 18 nC OptiMOS Power Mosfet - TDSON-8
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Descriptions
Descriptions of onsemi FDMC8030 provided by its distributors.
Dual N-Channel Power Trench® MOSFET 40V, 12A, 10mΩ
Dual N-Channel 40 V 1.9 W 30 nC Silicon Surface Mount Mosfet - POWER 33-8
Trans MOSFET N-CH 40V 12A 8-Pin WDFN EP T/R / MOSFET 2N-CH 40V 12A 8MLP
MOSFET Array, Dual N Channel, 40 V, 12 A, 10 Milliohms, Power 33, 8 Pins
MOSFET, DUAL N-CH, 40V, 12A, POWER 33-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 40V; On Resistance Rds(on; Available until stocks are exhausted Alternative available
This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +96.70%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Weight196 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationDual
Fall Time3 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.975 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements1
PackagingTape and Reel
Power Dissipation800 mW
Rds On Max10 mΩ
Rise Time3 ns
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time19 ns
Turn-On Delay Time7 ns
Dimensions
Height750 µm
Length3 mm
Width3 mm