onsemi FDG6335N
Production
Technical Specifications
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight28 mg
Technical
Continuous Drain Current (ID)700 mA
Current Rating700 mA
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time7 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance113 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation300 mW
Rds On Max300 mΩ
Resistance300 MΩ
Rise Time7 ns
Schedule B8541210080
Threshold Voltage1.1 V
Turn-Off Delay Time9 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)20 V
Dimensions
Height1 mm
Length2 mm
Width1.25 mm
Inventory History
3 month trend: +34.11%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FDG6335N.
Farnell
element14 APAC
Fairchild Semiconductor
Jameco
iiiC
TME
Newark
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDG6335N.
Related Parts
onsemi FDG6332C
Transistor MOSFET N/P-Channel 20 Volt 0.7A/0.6A 6-Pin SC-70
onsemi FDG6306P
PowerTrench® MOSFET, P-Channel 2.5V Specified, -20 V, -0.6 A, 420 mΩ
onsemi FDG6318PZ
Transistor MOSFET Array Dual P-CH 20V 0.5A 6-Pin SC-70 T/R
Descriptions
Descriptions of onsemi FDG6335N provided by its distributors.
Transistor MOSFET Array Dual N-CH 20V 0.7A 6-Pin SC-70 T/R - Tape and Reel
N-Channel PowerTrench® MOSFET, 20V, 0.7A, 300mΩ
20V N-CHANNEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:700mA; Source Voltage Vds:20V; On
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.1V; Power Dissipation Pd: 300mW; Transistor Case Style: SC-70; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +34.11%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight28 mg
Technical
Continuous Drain Current (ID)700 mA
Current Rating700 mA
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time7 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance113 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation300 mW
Rds On Max300 mΩ
Resistance300 MΩ
Rise Time7 ns
Schedule B8541210080
Threshold Voltage1.1 V
Turn-Off Delay Time9 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)20 V
Dimensions
Height1 mm
Length2 mm
Width1.25 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDG6335N.
Farnell
element14 APAC
Fairchild Semiconductor
Jameco
iiiC
TME
Newark
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements