onsemi FDG6332C

Transistor MOSFET N/P-Channel 20 Volt 0.7A/0.6A 6-Pin SC-70
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Technical
Continuous Drain Current (ID)700 mA
Current7 A
Current Rating700 mA
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time14 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance113 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation300 mW
Rds On Max300 mΩ
Resistance300 MΩ
Rise Time14 ns
Schedule B8541210080
Threshold Voltage1.1 V
Turn-Off Delay Time6 ns
Voltage20 V
Dimensions
Height1 mm
Length2 mm
Width1.25 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDG6332C.

element14 APAC
Datasheet8 pages0 years ago
Datasheet8 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Future Electronics
Datasheet8 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Technical Drawing1 page4 years ago
Fairchild Semiconductor
Technical Drawing1 page14 years ago
Jameco
Datasheet9 pages16 years ago
iiiC
Datasheet8 pages0 years ago

Inventory History

3 month trend:
-27.16%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDG6332C.

Related Parts

Descriptions

Descriptions of onsemi FDG6332C provided by its distributors.

Transistor MOSFET N/P-Channel 20 Volt 0.7A/0.6A 6-Pin SC-70
Dual N & P-Channel 20 V 300 mOhm PowerTrench Mosfet SC70-6
Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, NP, SMD, SC70-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:300mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:700mA; Package / Case:SC-70; Power Dissipation Pd:300mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.1V; Voltage Vgs Rds on Measurement:4.5V
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Technical Specifications

Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Technical
Continuous Drain Current (ID)700 mA
Current7 A
Current Rating700 mA
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time14 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance113 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation300 mW
Rds On Max300 mΩ
Resistance300 MΩ
Rise Time14 ns
Schedule B8541210080
Threshold Voltage1.1 V
Turn-Off Delay Time6 ns
Voltage20 V
Dimensions
Height1 mm
Length2 mm
Width1.25 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDG6332C.

element14 APAC
Datasheet8 pages0 years ago
Datasheet8 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Future Electronics
Datasheet8 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Technical Drawing1 page4 years ago
Fairchild Semiconductor
Technical Drawing1 page14 years ago
Jameco
Datasheet9 pages16 years ago
iiiC
Datasheet8 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago