onsemi FDG6303N
Production
Technical Specifications
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight28 mg
Technical
Continuous Drain Current (ID)500 mA
Current Rating500 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Element ConfigurationDual
Fall Time8.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance50 pF
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Elements2
PackagingCut Tape
Power Dissipation300 mW
Rds On Max450 mΩ
Resistance450 mΩ
Rise Time8.5 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage800 mV
Turn-Off Delay Time17 ns
Turn-On Delay Time3 ns
Voltage Rating (DC)25 V
Dimensions
Height1 mm
Length2 mm
Width1.25 mm
Inventory History
3 month trend: +414%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FDG6303N.
Upverter
Future Electronics
Fairchild Semiconductor
Jameco
iiiC
Newark
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDG6303N.
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Transistor: N+P-MOSFET, unipolar, 25V/-25V, 0.22A/-0.41A, 4/1.1ohm, 0.3W, -55+150 deg.C, SMD,
Descriptions
Descriptions of onsemi FDG6303N provided by its distributors.
Transistor MOSFET Negative Channel 25 Volt 0.5A 6-Pin SC-70 T/R
Transistor MOSFET Array Dual N-CH 25V 0.5A 6-Pin SC-70 T/R
Avnet Japan
DUAL N-CHANNEL, DIGITAL FET Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV
MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:NN; Voltage, Vds Typ:25V; Current, Id Cont:0.5A; On State Resistance:0.34ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.8V; Case Style:SC-70; Termination Type:SMD; Transistor Case Style:SC-70
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +414%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight28 mg
Technical
Continuous Drain Current (ID)500 mA
Current Rating500 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Element ConfigurationDual
Fall Time8.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance50 pF
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Elements2
PackagingCut Tape
Power Dissipation300 mW
Rds On Max450 mΩ
Resistance450 mΩ
Rise Time8.5 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage800 mV
Turn-Off Delay Time17 ns
Turn-On Delay Time3 ns
Voltage Rating (DC)25 V
Dimensions
Height1 mm
Length2 mm
Width1.25 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDG6303N.
Upverter
Future Electronics
Fairchild Semiconductor
Jameco
iiiC
Newark
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements