onsemi FDG6301N
Production
Technical Specifications
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight28 mg
Technical
Continuous Drain Current (ID)220 mA
Current Rating220 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance4 Ω
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Element ConfigurationDual
Fall Time4.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance9.5 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation300 mW
Rds On Max4 Ω
Resistance4 Ω
Rise Time4.5 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage850 mV
Turn-Off Delay Time4 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)25 V
Dimensions
Height1 mm
Length2 mm
Width1.25 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi FDG6301N.
Upverter
element14 APAC
Jameco
iiiC
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.158
$ 0.095
Stock
4,173,158
1,627,942
Authorized Distributors
10
1
Mount
Surface Mount
Surface Mount
Case/Package
SC
SC
Drain to Source Voltage (Vdss)
25 V
25 V
Continuous Drain Current (ID)
220 mA
220 mA
Threshold Voltage
850 mV
850 mV
Rds On Max
4 Ω
4 Ω
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
300 mW
300 mW
Input Capacitance
9.5 pF
9.5 pF
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDG6301N.
Related Parts
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Trans MOSFET N/P-CH 25V 0.22A/0.14A 6-Pin SC-70 T/R
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Transistor: N+P-MOSFET, unipolar, 25V/-25V, 0.22A/-0.41A, 4/1.1ohm, 0.3W, -55+150 deg.C, SMD,
onsemiFDG6301N-F085
Mosfet Array 2 N-Channel (Dual) 25V 220mA 300mW Surface Mount SC-70-6
Descriptions
Descriptions of onsemi FDG6301N provided by its distributors.
Transistor MOSFET Array Dual N-CH 25V 0.22A 6-Pin SC-70 T/R
Avnet Japan
Transistor NPN Field Effect FDG6301N FAIRCHILD RoHS miliampere=220 V=25
Halfin
DUAL N-CHANNEL, DIGITAL FET Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight28 mg
Technical
Continuous Drain Current (ID)220 mA
Current Rating220 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance4 Ω
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Element ConfigurationDual
Fall Time4.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance9.5 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation300 mW
Rds On Max4 Ω
Resistance4 Ω
Rise Time4.5 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage850 mV
Turn-Off Delay Time4 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)25 V
Dimensions
Height1 mm
Length2 mm
Width1.25 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDG6301N.
Upverter
element14 APAC
Jameco
iiiC
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements