Fairchild Semiconductor FDG6301N

Transistor NPN Field Effect FDG6301N FAIRCHILD RoHS miliampere=220 V=25

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0.110
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0.109
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58K8834 3,003 Buy Now »
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0.405 0.312 0.169 0.127 0.127
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0.093
Rochester Electronics
FDG6301N 636,933 Buy Now »
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0.140 0.140 0.130 0.120 0.120
Mouser
512-FDG6301N 13,596 Buy Now »
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0.400 0.311 0.169 0.127 0.101
Future Electronics
FDG6301N 69,000 Buy Now »
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0.101
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1471045 5,026 Buy Now »
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FDG6301N 0 ··
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FDG6301N 0 ··
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FDG6301N 24 Buy Now »
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FDG6301N 0 Send RFQ »
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FDG6301N 3,600 ··
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FDG6301N 1,326 ··
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FDG6301N 3,700 ··
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FDG6301N 30 ··
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FDG6301N 6,000 ··
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Descriptions

MOSFET N-CHAN DUAL 25V SC70-6
Avnet
MOSFET N-Channel 25V 0.22A SC-70-6
RS Components
Transistor NPN Field Effect FDG6301N FAIRCHILD RoHS miliampere=220 V=25
Halfin
MOSFET, FULL REEL
Farnell
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
Fairchild Semiconductor
Trans MOSFET N-CH 25V 0.22A 6-Pin SC-70 T/R
Chip One Stop Japan
MOSFETs SC70-6 N-CH 25V
Mouser
Trans MOSFET N-CH 25V 0.22A 6-Pin SC-70 T/R
Avnet Asia
MOSFET, FULL REEL
element14 APAC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:0.22A; On Resistance, Rds(on):4ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:6-SC-70 ;RoHS Compliant: Yes
Newark
Trans MOSFET N-CH 25V 0.22A 6-Pin SC-70 T/R
Verical
N-Channel 25 V 4 Ohm Dual Surface Mount Digital FET - SC-70-6
Future Electronics
MOSFET 2N-CH 25V 0.22A SC70-6
Digi-Key

Technical Specifications

Input Capacitance 9.5 pF
Current Rating 220 mA
Breakdown Voltage [Gate to Source] 8 V
Number of Pins 6
Gate Charge 290 pC
Breakdown Voltage (Drain to Source) 25 V
Packaging Cut Tape (CT)
RoHS Compliant
Polarity N-Channel Dual N-Channel
Lead-Free Status Lead Free
Drain to Source Voltage (Vds) 25 V
Lifecycle Status Active
Mounting Type Surface Mount
Continuous Drain Current (Ids) 220 mA
Voltage Rating (DC) 25 V
REACH SVHC Compliance No SVHC
Rise Time 4.5 ns
Drain to Source Resistance (on) (Rds) 4 Ω
Power Dissipation 300 mW

Documents

Mouser
Datasheet 5 pages 17 years ago
Fairchild Semiconductor
Technical Drawing 1 page 7 years ago
Jameco
Datasheet 6 pages 9 years ago
iiiC
Datasheet 5 pages 17 years ago
Onlinecomponents.com
Datasheet 5 pages 4 years ago
Compliance Statements
Rohs Statement 1 page 4 years ago
Materials Sheet 3 pages 2 years ago
Rohs Statement 1 page 3 years ago
Reach Statement 2 pages 3 years ago
Reach Statement 3 pages 2 years ago
Reach Statement 3 pages 3 years ago
Materials Sheet 3 pages 3 years ago

Images

Alternate Names

FAIRCHILD FDG6301N
FSC FDG6301N
FAIR FDG6301N
QTC FDG6301N
FAI FDG6301N
FAIRCHIL FDG6301N
FAIRCHILD SEMI FDG6301N
FCS FDG6301N
QT OPTO FDG6301N
FAIRCH FDG6301N
SPT FDG6301N
FAIRCHILD SEMICONDUCTOR CORP FDG6301N
FAIRCHI FDG6301N
FAIRC FDG6301N
FARICHILD FDG6301N
FAIRCHLD FDG6301N
FCH FDG6301N
FARA FDG6301N
FDS FDG6301N
FAIRCHILD SEMICONDUC FDG6301N
NSC/FSC FDG6301N
SIGNAL PROCESSING TECHNOLOGIES FDG6301N
FAIRCHILD SEMIC FDG6301N
OTHER FDG6301N
FAIRCHICD FDG6301N

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