onsemi FDFM2P110
Obsolete
Technical Specifications
Physical
MountSurface Mount
Number of Pins6
Weight9 mg
Technical
Collector Emitter Breakdown Voltage20 V
Continuous Drain Current (ID)3.5 A
Current Rating-3.5 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time3.2 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance280 pF
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2 W
Rds On Max140 mΩ
Resistance140 MΩ
Rise Time12 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)-20 V
Dimensions
Height750 µm
Length3 mm
Width3 mm
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDFM2P110.
Related Parts
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Infineon IRF7101TRPBF
MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.1Ohm;ID 3.5A;SO-8;PD 2W;VGS +/-12V
Descriptions
Descriptions of onsemi FDFM2P110 provided by its distributors.
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20 V, -3.5 A, 140 mΩ
MOSFET, P, FETKY, SMD, MLP; Transistor Type:MOSFET + Schottky; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:3.5A; Resistance, Rds On:0.14ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-1V; Case Style:Power 33; Termination Type:SMD; Current, Id Max:-10A; Current, If AV:1mA; No. of Pins:6; Power Dissipation:2mW; Voltage, Vds Max:20V; Voltage, Vf Max:0.39V; Voltage, Vgs th Max:-1.5V
FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins6
Weight9 mg
Technical
Collector Emitter Breakdown Voltage20 V
Continuous Drain Current (ID)3.5 A
Current Rating-3.5 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time3.2 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance280 pF
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2 W
Rds On Max140 mΩ
Resistance140 MΩ
Rise Time12 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)-20 V
Dimensions
Height750 µm
Length3 mm
Width3 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements