onsemi FDD8896
Production
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)94 A
Current Rating94 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.7 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.525 nF
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation80 W
Rds On Max5.7 mΩ
Resistance5.7 MΩ
Rise Time106 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time53 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)30 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Inventory History
3 month trend: -22.18%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi FDD8896.
Newark
onsemi
element14 APAC
DigiKey
Upverter
Future Electronics
iiiC
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.385
$ 0.667
Stock
2,701,457
689,968
Authorized Distributors
11
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-252-3
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
94 A
75 A
Threshold Voltage
2.5 V
-
Rds On Max
5.7 mΩ
6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
80 W
71 W
Input Capacitance
2.525 nF
2.4 nF
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDD8896.
Related Parts
Infineon IRLR8726PBF
Single N-Channel 30 V 5.8 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA
onsemi FDD8874
PowerTrench® MOSFET, N-Channel, 30V, 116A, 5.1mΩ
Infineon IRLR8726TRPBF
Single N-Channel 30 V 5.8 mOhm 23 nC HEXFET® Power Mosfet - TO-252-3
Descriptions
Descriptions of onsemi FDD8896 provided by its distributors.
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),TO-252AA
PowerTrench® MOSFET, N-Channel, 30V, 94A, 4.7mΩ
MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Source Voltage Vds:30V; On Resistance
N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -22.18%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)94 A
Current Rating94 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.7 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.525 nF
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation80 W
Rds On Max5.7 mΩ
Resistance5.7 MΩ
Rise Time106 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time53 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)30 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDD8896.
Newark
onsemi
element14 APAC
DigiKey
Upverter
Future Electronics
iiiC
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements