onsemi FDD86250

Shielded Gate PowerTrench® MOSFET, N-Channel, 150 V, 51 A, 22 mΩ
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance18.4 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.11 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation132 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max22 mΩ
Resistance45 MΩ
Rise Time3.7 ns
Schedule B8541290080
Threshold Voltage2.9 V
Turn-Off Delay Time20 ns
Turn-On Delay Time11.2 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDD86250.

Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet0 pages0 years ago
Datasheet6 pages17 years ago
Technical Drawing1 page10 years ago
Technical Drawing1 page13 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Technical Drawing1 page4 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

Inventory History

3 month trend:
-1.13%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDD86250.

Related Parts

Descriptions

Descriptions of onsemi FDD86250 provided by its distributors.

Shielded Gate PowerTrench® MOSFET, N-Channel, 150 V, 51 A, 22 mΩ
Transistor, N-channel, shielded gate, PowerTrench MOSFET, 150V 51A, 22mOhm, 8A | ON Semiconductor FDD86250
Power Field-Effect Transistor, 8A I(D), 150V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N CH, 150V, 50A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0184ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:132W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Technical Specifications

Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance18.4 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.11 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation132 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.1 W
Rds On Max22 mΩ
Resistance45 MΩ
Rise Time3.7 ns
Schedule B8541290080
Threshold Voltage2.9 V
Turn-Off Delay Time20 ns
Turn-On Delay Time11.2 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDD86250.

Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet0 pages0 years ago
Datasheet6 pages17 years ago
Technical Drawing1 page10 years ago
Technical Drawing1 page13 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Technical Drawing1 page4 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement4 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago