onsemi FDD7N20TM
Production
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance690 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance250 pF
Max Operating Temperature150 °C
Max Power Dissipation43 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation43 W
Rds On Max690 mΩ
Resistance690 mΩ
Rise Time30 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time13 ns
Turn-On Delay Time9 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Inventory History
3 month trend: +341%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FDD7N20TM.
Upverter
Fairchild Semiconductor
element14 APAC
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDD7N20TM.
Related Parts
onsemiFDD6N20TM
N-Channel Power MOSFET, UniFETTM, 200V, 4.5A, 800mΩ, DPAK
onsemiFDD6N25TM
N-Channel Power MOSFET, UniFETTM, 250 V, 4.4 A, 1.1 Ω, DPAK
onsemiFQD7P20TM
P-Channel Power MOSFET, QFET®, -200 V, -5.7 A, 690 mΩ, DPAK
Descriptions
Descriptions of onsemi FDD7N20TM provided by its distributors.
N-Channel Power MOSFET, UniFETTM, 200 V, 5 A, 690 mΩ, DPAK
N-Channel 200 V 0.69 Ohm Surface Mount UniFET Mosfet TO-252-3
MOSFET, N-CH, 200V, 5A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Source Voltage Vds:200V; On Resistance
Power Field-Effect Transistor, 5A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +341%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance690 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance250 pF
Max Operating Temperature150 °C
Max Power Dissipation43 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation43 W
Rds On Max690 mΩ
Resistance690 mΩ
Rise Time30 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time13 ns
Turn-On Delay Time9 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDD7N20TM.
Upverter
Fairchild Semiconductor
element14 APAC
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements