Fairchild Semiconductor FDD6685

FDD6685 Series 30 V 20 mOhm P-Channel PowerTrench Mosfet TO-252-3

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Descriptions

MOSFET P-CH 30V 11A DPAK - FDD6685
iiiC
MOSFET Fairchild FDD6685
RS Components
Trans MOSFET P-CH 30V 11A 3-Pin(2+Tab) TO-252AA T/R
Avnet Asia
MOSFETs 30V P-Channel PowerTrench
Mouser
Trans MOSFET P-CH 30V 11A 3-Pin(2+Tab) TO-252AA T/R
Chip One Stop Japan
FDD6685 Series 30 V 20 mOhm P-Channel PowerTrench Mosfet TO-252-3
Future Electronics
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-40A; On Resistance, Rds(on):20mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-252 ;RoHS Compliant: Yes
Newark
MOSFET, P, SMD, TO-252; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-30V; Current, Id Cont:-40A; Resistance, Rds On:20mohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1.8V; Case Style:DPAK; Termination Type:SMD
Farnell
MOSFET P-CH 30V 11A DPAK
Digi-Key
MOSFET, P, SMD, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.8W; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:-40A; Package / Case:DPAK; Power Dissipation Pd:3.8W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.8V; Voltage Vgs Rds on Measurement:10V
element14 APAC
Trans MOSFET P-CH 30V 11A 3-Pin(2+Tab) TO-252AA T/R
Avnet
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
Fairchild Semiconductor

Technical Specifications

Polarity P-Channel
Number of Pins 3
Rise Time 11 ns
Lead-Free Status Lead Free
Voltage Rating (DC) -30 V
Lifecycle Status Active
Mounting Type Surface Mount
RoHS Compliant
Breakdown Voltage [Gate to Source] -25 V (min) - 25 V (max)
Case / Package / Footprint TO-252
Drain to Source Resistance (on) (Rds) 20 mΩ
REACH SVHC Compliance No SVHC
Packaging Tape
Power Dissipation 3.8 W
Input Capacitance 1.715 nF
Current Rating -40 A
Continuous Drain Current (Ids) -40 A
Gate Charge 17 nC
Drain to Source Voltage (Vds) -30 V

Documents

Mouser
Datasheet 6 pages 12 years ago
Future Electronics
Datasheet 6 pages 12 years ago
Fairchild Semiconductor
Technical Drawing 1 page 2 years ago
Technical Drawing 1 page 6 years ago
element14 APAC
Datasheet
Datasheet
Datasheet
Farnell
Datasheet
Datasheet
iiiC
Datasheet 6 pages 12 years ago
Newark
Datasheet
Datasheet
Onlinecomponents.com
Datasheet 6 pages 4 years ago
Compliance Statements
Rohs Statement 1 page 4 years ago
Materials Sheet 3 pages 2 years ago
Reach Statement 2 pages 3 years ago
Reach Statement 3 pages 3 years ago
Materials Sheet 3 pages 3 years ago
Reach Statement 3 pages 2 years ago
Rohs Statement 1 page 3 years ago

Images

Alternate Names

FAIRCHILD FDD6685
FSC FDD6685
FAIR FDD6685
QTC FDD6685
FAI FDD6685
FAIRCHIL FDD6685
FAIRCHILD SEMI FDD6685
FCS FDD6685
QT OPTO FDD6685
FAIRCH FDD6685
SPT FDD6685
FAIRCHILD SEMICONDUCTOR CORP FDD6685
FAIRCHI FDD6685
FAIRC FDD6685
FARICHILD FDD6685
FAIRCHLD FDD6685
FCH FDD6685
FARA FDD6685
FDS FDD6685
FAIRCHILD SEMICONDUC FDD6685
NSC/FSC FDD6685
SIGNAL PROCESSING TECHNOLOGIES FDD6685
FAIRCHILD SEMIC FDD6685
OTHER FDD6685
FAIRCHICD FDD6685

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