onsemi FDD4141
Production
Technical Specifications
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)10.8 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance10.1 mΩ
Drain to Source Voltage (Vdss)-40 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.775 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.4 W
Rds On Max12.3 mΩ
Resistance12.3 MΩ
Rise Time7 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time38 ns
Turn-On Delay Time10 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Inventory History
3 month trend: +57.47%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.379
$ 2.4
Stock
1,506,958
1,204,659
Authorized Distributors
9
1
Mount
Surface Mount
-
Case/Package
TO-252
DPAK
Drain to Source Voltage (Vdss)
-40 V
-40 V
Continuous Drain Current (ID)
10.8 A
-50 A
Threshold Voltage
-1.8 V
-
Rds On Max
12.3 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.4 W
69 W
Input Capacitance
2.775 nF
-
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDD4141.
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Descriptions
Descriptions of onsemi FDD4141 provided by its distributors.
Transistor: P-MOSFET, unipolar, -40V, -50A, 12.3ohm, 69W, -55+175 deg.C, SMD, TO252(DPAK)
PowerTrench® MOSFET, P-Channel, -40V, -50A, 12.3mΩ
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.
MOSFET, P CH, 40V, 10.8A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):10.1mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -50 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 12.3 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 7 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 69
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +57.47%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)10.8 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance10.1 mΩ
Drain to Source Voltage (Vdss)-40 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.775 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.4 W
Rds On Max12.3 mΩ
Resistance12.3 MΩ
Rise Time7 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time38 ns
Turn-On Delay Time10 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements