onsemi FDD10N20LZTM
EOL
In StockTechnical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)7.6 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance585 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation56 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation56 W
Rds On Max360 mΩ
Rise Time15 ns
Turn-Off Delay Time55 ns
Turn-On Delay Time10 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FDD10N20LZTM.
Future Electronics
onsemi
Fairchild Semiconductor
Supply Chain
Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDD10N20LZTM.
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Descriptions
Descriptions of onsemi FDD10N20LZTM provided by its distributors.
N-Channel Power MOSFET,UniFETTM, Logic Level, 200 V, 7.6 A, 360 mΩ, DPAK
FDD10N20LZ Series 200 V 7.6 A 360 mOhm N-Channel UniFet Mosfet - DPAK-3
TAPE REEL/UNIFET1 200V N-CHANNEL MOSFET, DPAK, ZENER BUILT IN PRODUCT,
MOSFET, N-CH, 200V, 7.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.6A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Continuous Drain Current (ID)7.6 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance585 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation56 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation56 W
Rds On Max360 mΩ
Rise Time15 ns
Turn-Off Delay Time55 ns
Turn-On Delay Time10 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDD10N20LZTM.
Future Electronics
onsemi
Fairchild Semiconductor