onsemi FDC637AN

N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight36 mg
Technical
Continuous Drain Current (ID)6.2 A
Current Rating6.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.125 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Operating Temperature-55 °C
Nominal Vgs820 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.6 W
Rds On Max24 mΩ
Resistance24 mΩ
Rise Time13 ns
Schedule B8541290080
Threshold Voltage820 mV
Turn-Off Delay Time26 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)20 V
Dimensions
Height1 mm
Length3 mm
Width1.7 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDC637AN.

Farnell
Datasheet5 pages24 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Future Electronics
Datasheet5 pages24 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Datasheet6 pages2 years ago
Technical Drawing1 page3 years ago
Fairchild Semiconductor
Technical Drawing1 page15 years ago
Jameco
Datasheet6 pages16 years ago
iiiC
Datasheet5 pages24 years ago
TME
Datasheet0 pages0 years ago

Inventory History

3 month trend:
-8.97%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDC637AN.

Related Parts

Descriptions

Descriptions of onsemi FDC637AN provided by its distributors.

N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ
Trans MOSFET N-CH 20V 6.2A 6-Pin TSOT-23 T/R / MOSFET N-CH 20V 6.2A SSOT-6
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:820Mv; Power Dissipation:1.6W; No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi FDC637AN.
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • FDC637AN.
  • FDC637AN..

Technical Specifications

Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight36 mg
Technical
Continuous Drain Current (ID)6.2 A
Current Rating6.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.125 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Operating Temperature-55 °C
Nominal Vgs820 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.6 W
Rds On Max24 mΩ
Resistance24 mΩ
Rise Time13 ns
Schedule B8541290080
Threshold Voltage820 mV
Turn-Off Delay Time26 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)20 V
Dimensions
Height1 mm
Length3 mm
Width1.7 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDC637AN.

Farnell
Datasheet5 pages24 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Future Electronics
Datasheet5 pages24 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Datasheet6 pages2 years ago
Technical Drawing1 page3 years ago
Fairchild Semiconductor
Technical Drawing1 page15 years ago
Jameco
Datasheet6 pages16 years ago
iiiC
Datasheet5 pages24 years ago
TME
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago