Fairchild Semiconductor FDC6303N

Dual N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SSOT-6

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Descriptions

MOSFET, DUAL, N, SMD, SUPERSOT-6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:900mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:680mA; Current Id Max:680mA; Drain Source Voltage Vds:25V; Module Configuration:Dual; On Resistance Rds(on):450mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:900mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V
element14 APAC
Trans MOSFET N-CH 25V 0.68A 6-Pin SuperSOT T/R
Chip One Stop Japan
25V DUAL N-CH. FET, 450 MO, SS
Avnet
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
Fairchild Semiconductor
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:0.68A; On Resistance, Rds(on):450mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes
Newark
Dual N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SSOT-6
Future Electronics
MOSFET, DUAL, N, SMD, SUPERSOT-6; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:25V; Current, Id Cont:0.68A; Resistance, Rds On:0.45ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.8V; Case Style:SuperSOT-6; Termination Type:SMD
Farnell
MOSFET Dual N-Ch 25V 0.68A SuperSOT6
RS Components
Trans MOSFET N-CH 25V 0.68A 6-Pin SuperSOT T/R
Verical
MOSFETs SSOT-6 N-CH 25V
Mouser
MOSFET 2N-CH 25V 0.68A SSOT6
Digi-Key
IC FET DGTL N-CH DUAL 25V SSOT6
North Star Micro

Technical Specifications

Drain to Source Voltage (Vds) 25 V
Voltage Rating (DC) 25 V
RoHS Compliant
Current Rating 680 mA
Gate Charge 1.64 nC
Lifecycle Status Active
Mounting Type Surface Mount
Continuous Drain Current (Ids) 680 mA
Breakdown Voltage (Drain to Source) 25 V
Number of Pins 6
Power Dissipation 900 mW
Packaging Cut Tape (CT)
Drain to Source Resistance (on) (Rds) 450 mΩ
Polarity N-Channel Dual N-Channel
Input Capacitance 50 pF
REACH SVHC Compliance No SVHC
Case / Package / Footprint SSOT
Rise Time 8.5 ns
Breakdown Voltage [Gate to Source] 8 V
Lead-Free Status Lead Free

Documents

Mouser
Datasheet 5 pages 19 years ago
Fairchild Semiconductor
Technical Drawing 1 page 8 years ago
Jameco
Datasheet 6 pages 8 years ago
iiiC
Datasheet 5 pages 19 years ago
Compliance Statements
Rohs Statement 1 page 4 years ago
Reach Statement 2 pages 3 years ago
Rohs Statement 1 page 3 years ago
Reach Statement 3 pages 2 years ago
Materials Sheet 3 pages 2 years ago
Reach Statement 3 pages 3 years ago
Materials Sheet 3 pages 3 years ago

Images

Alternate Names

FAIRCHILD FDC6303N
FSC FDC6303N
FAIR FDC6303N
QTC FDC6303N
FAI FDC6303N
FAIRCHIL FDC6303N
FAIRCHILD SEMI FDC6303N
FCS FDC6303N
QT OPTO FDC6303N
FAIRCH FDC6303N
SPT FDC6303N
FAIRCHILD SEMICONDUCTOR CORP FDC6303N
FAIRCHI FDC6303N
FAIRC FDC6303N
FARICHILD FDC6303N
FAIRCHLD FDC6303N
FCH FDC6303N
FARA FDC6303N
FDS FDC6303N
FAIRCHILD SEMICONDUC FDC6303N
NSC/FSC FDC6303N
SIGNAL PROCESSING TECHNOLOGIES FDC6303N
FAIRCHILD SEMIC FDC6303N
OTHER FDC6303N
FAIRCHICD FDC6303N

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