onsemi FDC6301N

Name: onsemi FDC6301N
Brand: onsemi
SKU: FDC6301N
Price: 0.104 USD
Availability: InStock

Mosfet 2N-CH 25V 0.22A SSOT6 / Trans Mosfet N-ch 25V 0.22A 6-PIN TSOT-23 T/r

Production

Manufacturer Page Datasheet

Price and Stock

Distributor		SKU		MOQ	Pkg
Future Electronics		2432391	3,000	3K	Tape & Reel					0.101	1d
Rochester Electronics		FDC6301N	1			0.113	0.113	0.107	0.096	0.096	1d
DigiKey	3	FDC6301NCT-ND	13,724	1	Cut Tape	0.460	0.353	0.212	0.133	0.133	20h
Mouser		512-FDC6301N	34,937	1	Tape & Reel	0.450	0.353	0.197	0.134	0.102	3d
Avnet		FDC6301N	0	3K						0.112	5d

Technical Specifications

Physical

Case/PackageSOT-23-6

Contact PlatingTin

MountSurface Mount

Number of Pins6

Weight36 mg

Technical

Continuous Drain Current (ID)220 mA

Current Rating220 mA

Drain to Source Breakdown Voltage25 V

Drain to Source Resistance3.8 Ω

Drain to Source Voltage (Vdss)25 V

Dual Supply Voltage25 V

Element ConfigurationDual

Fall Time4.5 ns

Gate to Source Voltage (Vgs)8 V

Input Capacitance9.5 pF

Max Operating Temperature150 °C

Max Power Dissipation900 mW

Min Operating Temperature-55 °C

Nominal Vgs850 mV

Number of Elements2

PackagingCut Tape

Power Dissipation900 mW

Rds On Max4 Ω

Resistance4 Ω

Rise Time4.5 ns

Schedule B8541210080

TerminationSMD/SMT

Threshold Voltage850 mV

Turn-Off Delay Time4 ns

Turn-On Delay Time5 ns

Voltage Rating (DC)25 V

Dimensions

Height1 mm

Length3 mm

Width1.7 mm

Inventory History

3 month trend: -6.41%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Documents

Download datasheets and manufacturer documentation for onsemi FDC6301N.

Fairchild Semiconductor

Datasheet5 pages26 years ago

Technical Drawing1 page15 years ago

Farnell

Datasheet5 pages26 years ago

Datasheet0 pages0 years ago

onsemi

Datasheet0 pages0 years ago

element14 APAC

Datasheet0 pages0 years ago

Jameco

Datasheet6 pages16 years ago

iiiC

Datasheet5 pages26 years ago

Newark

Datasheet0 pages0 years ago

TME

Datasheet0 pages0 years ago

Inventory History

3 month trend:

-6.41%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDC6301N.

Related Parts

Descriptions

Descriptions of onsemi FDC6301N provided by its distributors.

MOSFET 2N-CH 25V 0.22A SSOT6 / Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R

Win Source

ON SEMICONDUCTOR - FDC6301N - Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV

Jak Electronics

Transistor NPN Field Effect FDC6301N FAIRCHILD RoHS milliampere=220 V=25 SSOT6

Halfin

DUAL N-CHANNEL , DIGITAL FET Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, DUAL N-CH, 25V, 0.22A, SUPERSOT; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:220mA; Source Voltage Vds:25V; On

element14 APAC

MOSFET, DUAL N-CH, 25V, 0.22A, SUPERSOT; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 3.1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 850mV; Power Dissipation Pd: 900mW; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.

Fairchild Semiconductor