Fairchild Semiconductor FDC6301N

Transistor NPN Field Effect FDC6301N FAIRCHILD RoHS miliampere=220 V=25 SSOT6

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FDC6301N 5,169 Buy Now »
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FDC6301N 3,431 Buy Now »
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Newark
58K8818 2,453 Buy Now »
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0.140 0.140 0.128 0.118 0.118
Mouser
512-FDC6301N 25,635 Buy Now »
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0.440 0.340 0.184 0.138 0.111
Rochester Electronics
FDC6301N 5,391 Buy Now »
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FDC6301N 3,000 Buy Now »
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FDC6301N 0 ··
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FDC6301N 0 ··
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SPEC
FDC6301N 3,917 ··
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FDC6301N 0 Send RFQ »
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FDC6301N 255 ··
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Descriptions

Trans MOSFET N-CH 25V 0.22A 6-Pin SuperSOT Trans MOSFET N-CH 25V 0.22A 6-Pin SuperSOT Trans MOSFET N-CH 25V 0.22A 6-Pin SuperSOT
SPEC
MOSFET, NN CHANNEL, 25V, 0.22A, SSOT6
Newark
IC FET DGTL N-CH DUAL 25V SSOT6 - FDC6301N
iiiC
Dual N-Channel 25 V 4 Ohm Surface Mount Digital FET - SSOT-6
Future Electronics
DUAL N CHANNEL MOSFET, 25V, SUPER SOT-6
element14 APAC
MOSFETs SSOT-6 N-CH 25V
Mouser
DUAL N CH MOSFET, 25V, SUPER SOT-6
Farnell
Trans MOSFET N-CH 25V 0.22A 6-Pin SuperSOT T/R
Verical
MOSFET 2N-CH 25V 0.22A SSOT6
Digi-Key
Trans MOSFET N-CH 25V 0.22A 6-Pin SuperSOT T/R
Chip One Stop Japan
25V DUAL N-CH. FET, 4 O, SSOT6
Avnet
Trans MOSFET N-CH 25V 0.22A 6-Pin SuperSOT T/R
Avnet Asia
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.
Fairchild Semiconductor
Transistor NPN Field Effect FDC6301N FAIRCHILD RoHS miliampere=220 V=25 SSOT6
Halfin
MOSFET N-Channel 25V 0.22A SuperSOT6
RS Components

Technical Specifications

Polarity N-Channel Dual N-Channel
Input Capacitance 9.5 pF
Continuous Drain Current (Ids) 220 mA
Lead-Free Status Lead Free
REACH SVHC Compliance No SVHC
Case / Package / Footprint SSOT
Current Rating 220 mA
Number of Pins 6
Breakdown Voltage (Drain to Source) 25 V
Packaging Cut Tape (CT)
Mounting Type Surface Mount
RoHS Compliant
Gate Charge 490 pC
Voltage Rating (DC) 25 V
Lifecycle Status Active
Rise Time 4.5 ns
Power Dissipation 900 mW
Drain to Source Voltage (Vds) 25 V
Drain to Source Resistance (on) (Rds) 38 mΩ

Documents

Newark
Datasheet 5 pages 19 years ago
Fairchild Semiconductor
Technical Drawing 1 page 8 years ago
Jameco
Datasheet 6 pages 8 years ago
iiiC
Datasheet 5 pages 19 years ago
Onlinecomponents.com
Datasheet 5 pages 4 years ago
Compliance Statements
Rohs Statement 1 page 4 years ago
Reach Statement 2 pages 3 years ago
Rohs Statement 1 page 3 years ago
Materials Sheet 3 pages 2 years ago
Reach Statement 3 pages 2 years ago
Reach Statement 3 pages 3 years ago
Materials Sheet 3 pages 3 years ago

Images

Alternate Names

FAIRCHILD FDC6301N
FSC FDC6301N
FAIR FDC6301N
QTC FDC6301N
FAI FDC6301N
FAIRCHIL FDC6301N
FAIRCHILD SEMI FDC6301N
FCS FDC6301N
QT OPTO FDC6301N
FAIRCH FDC6301N
SPT FDC6301N
FAIRCHILD SEMICONDUCTOR CORP FDC6301N
FAIRCHI FDC6301N
FAIRC FDC6301N
FARICHILD FDC6301N
FAIRCHLD FDC6301N
FCH FDC6301N
FARA FDC6301N
FDS FDC6301N
FAIRCHILD SEMICONDUC FDC6301N
NSC/FSC FDC6301N
SIGNAL PROCESSING TECHNOLOGIES FDC6301N
FAIRCHILD SEMIC FDC6301N
OTHER FDC6301N
FAIRCHICD FDC6301N

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