onsemi FDC610PZ
Production
Technical Specifications
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight36 mg
Technical
Continuous Drain Current (ID)-4.9 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.005 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.6 W
Rds On Max42 mΩ
Rise Time4 ns
Schedule B8541290080
Threshold Voltage-2.2 V
Turn-Off Delay Time33 ns
Turn-On Delay Time7 ns
Dimensions
Height1 mm
Length3 mm
Width1.7 mm
Inventory History
3 month trend: +3.02%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FDC610PZ.
Fairchild Semiconductor
iiiC
TME
Newark
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDC610PZ.
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Descriptions
Descriptions of onsemi FDC610PZ provided by its distributors.
P-Channel PowerTrench® MOSFET, -30V, -4.9A, 42mΩ
Transistor, P-channel, PowerTrench MOSFET, 30V, 4.9A, 42mOhm, SUPERSOT6 | ON Semiconductor FDC610PZ
P-Channel 30 V 42 mOhm 24 nC SMT PowerTrench Mosfet - SSOT-6
MOSFET, P CH, 30V, 0.0049A, SSOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-2.2V; Power Dissipation Pd:800mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SSOT; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
This Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +3.02%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight36 mg
Technical
Continuous Drain Current (ID)-4.9 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.005 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.6 W
Rds On Max42 mΩ
Rise Time4 ns
Schedule B8541290080
Threshold Voltage-2.2 V
Turn-Off Delay Time33 ns
Turn-On Delay Time7 ns
Dimensions
Height1 mm
Length3 mm
Width1.7 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDC610PZ.
Fairchild Semiconductor
iiiC
TME
Newark
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements