onsemi FDB52N20TM

In a Pack of 5, N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK ON Semiconductor FDB52N20TM
Production
In Stock

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight1.31247 g
Technical
Continuous Drain Current (ID)52 A
Current Rating52 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time150 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation357 W
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation357 W
Rds On Max49 mΩ
Resistance49 mΩ
Rise Time160 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time48 ns
Turn-On Delay Time53 ns
Voltage Rating (DC)200 V
Dimensions
Height4.572 mm
Length9.98 mm
Width10.16 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDB52N20TM.

Newark
Datasheet0 pages0 years ago
Datasheet8 pages10 years ago
Datasheet0 pages0 years ago
Upverter
Datasheet0 pages0 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet0 pages0 years ago
element14 APAC
Datasheet8 pages10 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Factory Futures
Datasheet8 pages18 years ago
Mouser
Datasheet8 pages18 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Technical Drawing1 page14 years ago
iiiC
Datasheet8 pages18 years ago
TME
Datasheet0 pages0 years ago

Inventory History

3 month trend:
-98.82%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDB52N20TM.

Related Parts

Descriptions

Descriptions of onsemi FDB52N20TM provided by its distributors.

In a Pack of 5, N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK ON Semiconductor FDB52N20TM
Power MOSFET, N-Channel, UniFETTM, 250V, 52A, 69mΩ, D2PAK
N-Channel 200 V 0.049 Ohm Surface Mount UniFET Mosfet - D2PAK-3
Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • FDB52N20TM.

Technical Specifications

Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight1.31247 g
Technical
Continuous Drain Current (ID)52 A
Current Rating52 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time150 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation357 W
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation357 W
Rds On Max49 mΩ
Resistance49 mΩ
Rise Time160 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time48 ns
Turn-On Delay Time53 ns
Voltage Rating (DC)200 V
Dimensions
Height4.572 mm
Length9.98 mm
Width10.16 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDB52N20TM.

Newark
Datasheet0 pages0 years ago
Datasheet8 pages10 years ago
Datasheet0 pages0 years ago
Upverter
Datasheet0 pages0 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet0 pages0 years ago
element14 APAC
Datasheet8 pages10 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Factory Futures
Datasheet8 pages18 years ago
Mouser
Datasheet8 pages18 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Technical Drawing1 page14 years ago
iiiC
Datasheet8 pages18 years ago
TME
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago