onsemi FDB28N30TM
Production
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight1.31247 g
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage300 V
Drain to Source Resistance108 mΩ
Drain to Source Voltage (Vdss)300 V
Element ConfigurationSingle
Fall Time69 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.25 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation250 W
Rds On Max129 mΩ
Resistance129 mΩ
Rise Time135 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time79 ns
Turn-On Delay Time35 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width11.33 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FDB28N30TM.
Factory Futures
onsemi
Farnell
element14 APAC
Fairchild Semiconductor
TME
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDB28N30TM.
Related Parts
onsemi FDB33N25TM
N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, D2PAK
onsemi FDB44N25TM
N-Channel Power MOSFET, UniFETTM, 250V, 44A, 69mΩ, D2PAK
onsemi FDB14N30TM
N-Channel Power MOSFET, UniFETTM, 300 V, 14 A, 290 mΩ, D2PAK
Descriptions
Descriptions of onsemi FDB28N30TM provided by its distributors.
N-Channel Power MOSFET, UniFETTM, 300V, 28A, 129mΩ, D2PAK
N-Channel 300 V 0.129 Ohm Surface Mount UniFET Mosfet - D2PAK-3
Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 300V 28A D2PAK
300 V, 28 A, 129 MILLI OHM N-CHANNEL UNIFET MOSFET Power Field-Effect Transistor, 28A I(D), 300V, 0.129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 300V, 28A, TO-263AB-2; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 300V; On Resistance Rds(on): 0.108ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 250W; Transistor Case Style: TO-263AB; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight1.31247 g
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage300 V
Drain to Source Resistance108 mΩ
Drain to Source Voltage (Vdss)300 V
Element ConfigurationSingle
Fall Time69 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.25 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation250 W
Rds On Max129 mΩ
Resistance129 mΩ
Rise Time135 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time79 ns
Turn-On Delay Time35 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width11.33 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDB28N30TM.
Factory Futures
onsemi
Farnell
element14 APAC
Fairchild Semiconductor
TME
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements