onsemi FDB0105N407L

Transistor MOSFET N-CH 40V 460A 7-Pin TO-263 T/R - Tape and Reel
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Weight1.312 g
Technical
Continuous Drain Current (ID)460 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance600 µΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance23.1 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation3.8 W
Rds On Max800 µΩ
Schedule B8541290080
Threshold Voltage2.8 V
Turn-Off Delay Time117 ns
Turn-On Delay Time45 ns
Dimensions
Height4.9 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDB0105N407L.

Future Electronics
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Technical Drawing1 page4 years ago
Fairchild Semiconductor
Technical Drawing1 page12 years ago
Datasheet0 pages0 years ago

Inventory History

3 month trend:
-20.45%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusLIFETIME (Last Updated: 3 days ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDB0105N407L.

Related Parts

Descriptions

Descriptions of onsemi FDB0105N407L provided by its distributors.

Transistor MOSFET N-CH 40V 460A 7-Pin TO-263 T/R - Tape and Reel
N-Channel PowerTrench® MOSFET 40 V 460A, 0.8mΩ
FAIRCHILD SEMICONDUCTOR FDB0105N407L MOSFET Transistor, N Channel, 460 A, 40 V, 0.0006 ohm, 10 V, 2.8 VNew
Power Field-Effect Transistor, 460A I(D), 40V, 0.0008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
Chip Resistor - Surface Mount 158Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 158 OHM 1% 1/10W 0402
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
MOSFET, N-CH, 40V, 460A, TO-220-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 460A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 600µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Technical Specifications

Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Weight1.312 g
Technical
Continuous Drain Current (ID)460 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance600 µΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance23.1 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation3.8 W
Rds On Max800 µΩ
Schedule B8541290080
Threshold Voltage2.8 V
Turn-Off Delay Time117 ns
Turn-On Delay Time45 ns
Dimensions
Height4.9 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDB0105N407L.

Future Electronics
Datasheet0 pages0 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Technical Drawing1 page4 years ago
Fairchild Semiconductor
Technical Drawing1 page12 years ago
Datasheet0 pages0 years ago

Compliance

Environmental Classification
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago