onsemi FCP11N60
Production
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance320 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time56 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.49 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max380 mΩ
Resistance380 MΩ
Rise Time98 ns
Threshold Voltage5 V
Turn-Off Delay Time119 ns
Turn-On Delay Time34 ns
Voltage Rating (DC)600 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi FCP11N60.
Future Electronics
Newark
element14
element14 APAC
iiiC
_legacy Avnet
Jameco
TME
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.504
$ 1.32
Stock
399,319
442,378
Authorized Distributors
6
12
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
11 A
11 A
Threshold Voltage
5 V
-
Rds On Max
380 mΩ
380 mΩ
Gate to Source Voltage (Vgs)
30 V
20 V
Power Dissipation
125 W
125 W
Input Capacitance
1.49 nF
1.2 nF
Supply Chain
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 day ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FCP11N60.
Related Parts
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Descriptions
Descriptions of onsemi FCP11N60 provided by its distributors.
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220
N-Channel 600 V 0.38 O 125 W 52 nC Flange Mount SuperFET FRFET Mosfet - TO-220
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):320mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance320 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time56 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.49 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max380 mΩ
Resistance380 MΩ
Rise Time98 ns
Threshold Voltage5 V
Turn-Off Delay Time119 ns
Turn-On Delay Time34 ns
Voltage Rating (DC)600 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Documents
Download datasheets and manufacturer documentation for onsemi FCP11N60.
Future Electronics
Newark
element14
element14 APAC
iiiC
_legacy Avnet
Jameco
TME
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements