Vishay SUD42N03-3M9P-GE3
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-09-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-10-29
LTD Date2017-04-29
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Descripciones
Descripciones de Vishay SUD42N03-3M9P-GE3 suministradas por sus distribuidores.
SUD42N03-3M9P-GE3 N-CHANNEL MOSFET TRANSISTOR, 107 A, 30 V, 3-PIN TO-252AA
SUD42N03 Series 30 V 3.9 mOhms SMT N-Channel Power Mosfet - TO-252
Power Field-Effect Transistor, 42A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET,N CH,DIODE,30V,42A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3200µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
Alias de fabricantes
Vishay tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Vishay también podría ser conocido por los siguientes nombres:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Especificaciones técnicas
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins2
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.9 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.535 nF
Max Operating Temperature150 °C
Max Power Dissipation73.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.5 W
Rds On Max3.9 mΩ
Rise Time10 ns
Threshold Voltage1 V
Turn-Off Delay Time35 ns
Turn-On Delay Time11 ns
Fichas técnicas y documentos
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Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento