Vishay SI7686DP-T1-E3
$ 0.765
NRND
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | SI7686DP-T1-E3 | 3000 | 3K | Tape & Reel | ||||||||
| DigiKey | SI7686DP-T1-E3CT-ND | 3000 | 1 | Cut Tape | ||||||||
| TTI | SI7686DP-T1-E3 | 3000 | 3K | Tape & Reel | 4h | |||||||
| Newark | SI7686DP-T1-E3 | 0 | 3K | Tape & Reel | ||||||||
| Avnet | SI7686DP-T1-E3 | 0 | 3K | 5h |
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-07-20
Lifecycle StatusNRND (Last Updated: 4 months ago)
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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
Descripciones
Descripciones de Vishay SI7686DP-T1-E3 suministradas por sus distribuidores.
Single N-Channel 30 V 0.0095 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
Trans MOSFET N-CH 30V 17.9A 8-Pin PowerPAK SO EP T/R
Power Field-Effect Transistor, 17.9A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
5W(Ta),37.9W(Tc) 20V 3V@ 250¦ÌA 26nC@ 10 V 1N 30V 9.5m¦¸@ 13.8A,10V 35A 1.22nF@15V 4.9mm*5.89mm*1.07mm
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:35000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
Alias de fabricantes
Vishay tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Vishay también podría ser conocido por los siguientes nombres:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)17.9 A
Drain to Source Resistance9.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.22 nF
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation5 W
Rds On Max9.5 mΩ
Resistance9.5 mΩ
Rise Time16 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time13 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento