Vishay SI5459DU-T1-GE3
$ 0.295
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | SI5459DU-T1-GE3 | 1 | 1 | |||||||||
| DigiKey | SI5459DU-T1-GE3CT-ND | 10.826 | 1 | Cut Tape | ||||||||
| TTI | SI5459DU-T1-GE3 | 3000 | 3K | Tape & Reel | 23h | |||||||
| TME | SI5459DU-T1-GE3 | 0 | 3K | 11h | ||||||||
| Newark | SI5459DU-T1-GE3 | 0 | 3K | Cut Tape |
Historial de existencias
Tendencia de 3 meses: +9.29%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-25
Lifecycle StatusProduction (Last Updated: 4 months ago)
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1.56W(Ta) 8V 1.3V@ 250¦ÌA 11.6nC@ 4.5 V 1N 20V 20m¦¸@ 9.4A,4.5V 7.3A 1nF@10V SOIC-8
Descripciones
Descripciones de Vishay SI5459DU-T1-GE3 suministradas por sus distribuidores.
Si5459DU Series 20 V 8 A 0.052 Ohm P-Channel MOSFET - PowerPAK® ChipFET
Trans MOSFET P-CH 20V 6.7A 8-Pin PowerPAK ChipFET T/R
Power Field-Effect Transistor, 6.7A I(D), 20V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
3.5W(Ta),10.9W(Tc) 12V 1.4V@ 250¦ÌA 26nC@ 10 V 1P 20V 52m¦¸@ 6.7A,4.5V 8A 665pF@10V 3mm*1.9mm*800¦Ìm
P CHANNEL MOSFET, -20V, 8A; Transistor P; P CHANNEL MOSFET, -20V, 8A; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.4V; No. of Pins:8
Alias de fabricantes
Vishay tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Vishay también podría ser conocido por los siguientes nombres:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Historial de existencias
Tendencia de 3 meses: +9.29%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals3
Technical
Continuous Drain Current (ID)6.7 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance52 mΩ
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance665 pF
Max Operating Temperature150 °C
Max Power Dissipation10.9 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.5 W
Rds On Max52 mΩ
Resistance52 mΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage-1.4 V
Turn-Off Delay Time26 ns
Turn-On Delay Time6 ns
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento